UnitedSiC Datasheet | Pinout, Features, Price Comparison & PDF

70mW - 1200V SiC Normally-On JFET | UJ3N120070K3S Datasheet Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFE

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DATASHEET UJ4C075018K3S CASE CASE D (2) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-3L, 750 V, 18 mohm Rev. B, January 202

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DATASHEET UF3SC120016K3S CASE CASE D (2) G (1) 1 23 S (3) 1200V-16mW SiC FET Rev. B, December 2019 Description This SiC FET device is based on

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DATASHEET UJ3C065030B3 TAB 2 3 1 G (1) TAB D (2) S (3) 650V-27mW SiC FET Rev. B, April 2022 Description This SiC FET device is based on a unique

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DATASHEET UJ3C120080K3S 1200V-80mW SiC FET Rev. E, August 2021 The UJ3C120080K3S is not recommended for new designs. UJ3C120070K3S is recommended as

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DATASHEET UF3C065030T3S CASE CASE D (2) G (1) 1 23 S (3) Part Number UF3C065030T3S Package TO-220-3L Marking UF3C065030T3S 650V-27mW SiC Casco

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DATASHEET UJ4C075023K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 750 V, 23 mohm Rev. C, January 202

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DATASHEET UF3C170400K3S CASE CASE D (2) G (1) 1 23 S (3) Part Number UF3C170400K3S Package TO-247-3L Marking UF3C170400K3S 1700V-410mW SiC FE

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DATASHEET UJ3C065080T3S CASE CASE D (2) G (1) 1 23 S (3) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-220-3L, 650 V, 80 mohm R

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DATASHEET UJ4C075033K3S CASE CASE D (2) 750V-33mW SiC FET Rev. B, July 2021 Description The UJ4C075033K3S is a 750V, 33mW G4 SiC FET. It is based o

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DATASHEET UJ4C075023K3S CASE CASE D (2) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-3L, 750 V, 23 mohm Rev. C, January 202

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DATASHEET UJ4SC075011B7S 1 7 Tab G (1) KS (2) D (Tab) S (3-7) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 750V, 11 moh

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DATASHEET UJ4C075023L8S TAB TAB D 1 8 TAB 8 1 G (1) KS (2) S (3-8) Part Number UJ4C075023L8S Package MO-229 Marking UJ4C075023 Silicon Car

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DATASHEET UJ3C120070K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 70 mohm Rev. B, January 20

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DATASHEET UJ3N120065K3S CASE CASE D (2) 123 G (1) S (3) Silicon Carbide (SiC) JFET - EliteSiC, Power N-Channel, TO-247-3L, 1200 V, 66 mohm Rev. B

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DATASHEET UJ4C075023B7S Tab 1 7 G (1) KS (2) D (Tab) S (3-7) Part Number UJ4C075023B7S Package D2PAK-7L Marking UJ4C075023B7S Silicon Carbide

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750V-9mW SiC FET DATASHEET UJ4SC075009K4S CASE CASE D (1) Rev. B, July 2021 Description The UJ4SC075009K4S is a 750V, 9mW G4 SiC FET. It is based

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650V-6.7mW SiC FET DATASHEET UF3SC065007K4S CASE CASE D (1) Rev. B, December 2019 Description This SiC FET device is based on a unique ‘cascode’ c

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