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UJ3C120080K3S Datasheet MOSFET

Manufacturer: UnitedSiC

Overview: DATASHEET UJ3C120080K3S 1200V-80mW SiC FET Rev. E, August 2021 The UJ3C120080K3S is not recommended for new designs. UJ3C120070K3S is recommended as a replacement.

General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.

Available in the TO-247-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive.

Key Features

  • S (3) Marking UJ3C120080K3S w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 Typical.

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