UJ3C065030B3 Datasheet | UnitedSiC

2 3 G (1) TAB D (2) S (3) 650V-27mW SiC FET Rev. B, April 2022 Description This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. Features w Typical on-resistance...