UJ3C065080T3S Datasheet | UnitedSiC

CASE CASE D (2) G (1) 1 23 S (3) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-220-3L, 650 V, 80 mohm Rev. E, Janauary 2025 Description This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-220-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any...