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DATASHEET
UJ3C065080T3S
CASE
CASE D (2)
G (1) 1 23
S (3)
Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-220-3L, 650 V, 80 mohm
Rev. E, Janauary 2025
Description
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-220-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.