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UJ3C065080T3S Datasheet Sic Cascode JFET

Manufacturer: UnitedSiC

Overview: DATASHEET UJ3C065080T3S CASE CASE D (2) G (1) 1 23 S (3) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-220-3L, 650 V, 80 mohm Rev.

Datasheet Details

Part number UJ3C065080T3S
Manufacturer UnitedSiC
File Size 592.26 KB
Description SiC Cascode JFET
Datasheet UJ3C065080T3S-UnitedSiC.pdf

General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.

Available in the TO-220-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

Key Features

  • w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Part Number UJ3C065080T3S Package TO-220-3L Marking UJ3C065080T3S Typical.

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