Datasheet4U Logo Datasheet4U.com

UJ3C065080B3 Datasheet MOSFET

Manufacturer: UnitedSiC

Overview: DATASHEET UJ3C065080B3 TAB 2 3 1 G (1) TAB D (2) S (3) 650V-80mW SiC FET Rev.

General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.

Available in the D2PAK-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

Key Features

  • w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 Part Number UJ3C065080B3 Package D2PAK-3L Marking UJ3C065080B3 Typical.

UJ3C065080B3 Distributor