Datasheet4U Logo Datasheet4U.com

UJ3C065030K3S Datasheet MOSFET

Manufacturer: UnitedSiC

Overview: DATASHEET UJ3C065030K3S CASE CASE D (2) 650V-27mW SiC FET Rev.

General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.

Available in the TO-247-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Key Features

  • S (3) w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Marking UJ3C065030K3S Typical.

UJ3C065030K3S Distributor