UJ3D06504TS Datasheet | UnitedSiC

Description United Silicon Carbide, Inc. offers the 3rd generation of high performance Si C Merged-Pi N-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. CASE CASE Features w 175°C maximum operating junction temperature w Easy paralleling w Extremely fast switching not dependent on temperature w No reverse or forward recovery w Enhanced surge current capability, MPS structure w Excellent thermal performance, Ag sintered w 100% UIS tested Part Number UJ3D06504TS Package TO-220-2L Marking UJ3D06504TS Typical Applications w Power converters w Industrial motor drives w Switching-mode power supplies w Power factor correction modules Maximum Ratings Parameter DC blocking voltage Repetitive peak reverse voltage, Tj=25°C Surge peak reverse voltage Maximum DC forward current Non-repetitive forward surge current sine halfwave Repetitive forward surge current sine halfwave, D=0.1 Non-repetitive peak forward current i2t value Power dissipation Maximum junction temperature Operating and storage temperature Soldering temperatures, wavesoldering only allowed at leads Symbol VR VRRM VRSM IF IFSM IFRM IF,max  i2dt PTot TJ,max TJ, TSTG Tsold Test Conditions TC = 156°C TC = 25°C, tp = 10ms TC = 110°C, tp =10ms TC = 25°C, tp = 10ms TC = 110°C, tp =10ms TC = 25°C, tp =10ms TC = 110°C, tp =10ms TC = 25°C, tp =10ms TC = 110°C, tp =10ms TC = 25°C TC = 156°C 1.6mm from case for 10s Value 650 650 650 4 29 26 23.2 13.6 260 260 4.2 3.4 71.4 9 175 -55 to 175 Units V V V A A A2s W °C °C °C Rev. D, January 2025 For more information go to .unitedsic.. Silicon Carbide (Si C) Diode - Elite Si C, TO-220-2L, 4A, 650V Si C Merged Pi N-Schottky (MPS) Diode | UJ3D06504TS Datasheet...