UJ3D06512TS Datasheet | UnitedSiC

Description United Silicon Carbide, Inc. offers the 3rd generation of high performance Si C Merged-Pi N-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. Features w Maximum operating temperature of 175°C w Easy paralleling w Extremely fast switching not dependent on temperature w No reverse or forward recovery w Enhanced surge current capability, MPS structure w Excellent thermal performance, Ag sintered w 100% UIS tested w AEC-Q101 qualified Typical applications w Power converters w Industrial motor drives w Switch mode power supplies w Power factor correction modules Datasheet: UJ3D06512TS Rev. A, June 2019 Maximum Ratings Parameter DC blocking voltage Repetitive peak reverse voltage, TJ=25°C Surge peak reverse voltage Maximum DC forward current Non-repetitive forward surge current sine halfwave Repetitive forward surge current sine halfwave, D=0.1 Non-repetitive peak forward current i2t value Power dissipation Maximum junction temperature Operating and storage temperature Soldering temperatures, wavesoldering only allowed at leads Symbol VR VRRM VRSM IF IFSM IFRM IF,max  i2dt Ptot TJ,max TJ, TSTG Tsold Test Conditions TC = 153°C TC = 25°C, tp = 10ms TC = 110°C, tp = 10ms TC = 25°C, tp = 10ms TC = 110°C, tp = 10ms TC = 25°C, tp = 10ms TC = 110°C, tp = 10ms TC = 25°C, tp = 10ms TC = 110°C, tp = 10ms TC = 25°C TC = 153°C 1.6mm from case for 10s Value 650 650 650 12 81 70 53 32.5 480 480 32.8 24.5 187.5 27.5 175 -55 to 175 Units V V V A A A2s W °C °C °C Thermal Characteristics Parameter Thermal resistance, junction-to-case Symbol Rq JC Test Conditions Value Units Min Typ Max...