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UJ3D06510TS Datasheet 650v Sic Schottky Diode

Manufacturer: UnitedSiC

Overview: Gen-III | 10A - 650V SiC Schottky Diode | UJ3D06510TS . Datasheet .

Datasheet Details

Part number UJ3D06510TS
Manufacturer UnitedSiC
File Size 962.32 KB
Description 650V SiC Schottky Diode
Datasheet UJ3D06510TS-UnitedSiC.pdf

General Description

United Silicon Carbide, Inc.

offers the 3rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes.

With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.

Key Features

  • w 175°C maximum operating junction temperature w Easy paralleling w Extremely fast switching not dependent on temperature w No reverse or forward recovery w Enhanced surge current capability, MPS structure w Excellent thermal performance, Ag sintered w 100% UIS tested w AEC-Q101 qualified Part Number UJ3D06510TS Package TO-220-2L Marking UJ3D06510TS Typical.

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