900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






UnitedSiC

UJ3C065080K3S Datasheet Preview

UJ3C065080K3S Datasheet

MOSFET

No Preview Available !

DATASHEET
UJ3C065080K3S
CASE
CASE
D (2)
G (1)
1 23
S (3)
Part Number
UJ3C065080K3S
Package
TO-247-3L
Marking
UJ3C065080K3S
650V-80mW SiC FET
Rev. D, December 2019
Description
This SiC FET device is based on a unique ‘cascode’ circuit
configuration, in which a normally-on SiC JFET is co-packaged with a Si
MOSFET to produce a normally-off SiC FET device. The device’s
standard gate-drive characteristics allows for a true “drop-in
replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction
devices. Available in the TO-247-3L package, this device exhibits ultra-
low gate charge and exceptional reverse recovery characteristics,
making it ideal for switching inductive loads , and any application
requiring standard gate drive.
Features
w Typical on-resistance RDS(on),typ of 80mW
w Maximum operating temperature of 175°C
w Excellent reverse recovery
w Low gate charge
w Low intrinsic capacitance
w ESD protected, HBM class 2
Typical applications
w EV charging
w PV inverters
w Switch mode power supplies
w Power factor correction modules
w Motor drives
w Induction heating
Datasheet: UJ3C065080K3S
Rev. D, December 2019
1




UnitedSiC

UJ3C065080K3S Datasheet Preview

UJ3C065080K3S Datasheet

MOSFET

No Preview Available !

Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current 1
Pulsed drain current 2
Single pulsed avalanche energy 3
Power dissipation
Maximum junction temperature
Operating and storage temperature
Max. lead temperature for soldering,
1/8” from case for 5 seconds
1. Limited by TJ,max
2. Pulse width tp limited by TJ,max
3. Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS
Ptot
TJ,max
TJ, TSTG
TL
Test Conditions
DC
TC = 25°C
TC = 100°C
TC = 25°C
L=15mH, IAS =2.1A
TC = 25°C
Value
650
-25 to +25
31
23
65
33
190
175
-55 to 175
250
Units
V
V
A
A
A
mJ
W
°C
°C
°C
Thermal Characteristics
Parameter
Thermal resistance, junction-to-case
Symbol
RqJC
Test Conditions
Min
Value
Typ
Max
Units
0.61 0.79 °C/W
Datasheet: UJ3C065080K3S
Rev. D, December 2019
2


Part Number UJ3C065080K3S
Description MOSFET
Maker UnitedSiC
PDF Download

UJ3C065080K3S Datasheet PDF






Similar Datasheet

1 UJ3C065080K3S MOSFET
UnitedSiC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy