DATASHEET
UJ3C065080K3S
CASE
CASE
D (2)
G (1)
1 23
S (3)
Part Number
UJ3C065080K3S
Package
TO-247-3L
Marking
UJ3C065080K3S
650V-80mW SiC FET
Rev. D, December 2019
Description
This SiC FET device is based on a unique ‘cascode’ circuit
configuration, in which a normally-on SiC JFET is co-packaged with a Si
MOSFET to produce a normally-off SiC FET device. The device’s
standard gate-drive characteristics allows for a true “drop-in
replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction
devices. Available in the TO-247-3L package, this device exhibits ultra-
low gate charge and exceptional reverse recovery characteristics,
making it ideal for switching inductive loads , and any application
requiring standard gate drive.
Features
w Typical on-resistance RDS(on),typ of 80mW
w Maximum operating temperature of 175°C
w Excellent reverse recovery
w Low gate charge
w Low intrinsic capacitance
w ESD protected, HBM class 2
Typical applications
w EV charging
w PV inverters
w Switch mode power supplies
w Power factor correction modules
w Motor drives
w Induction heating
Datasheet: UJ3C065080K3S
Rev. D, December 2019
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