This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
Key Features
w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2
Typical.
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DATASHEET UJ3C065080K3S CASE CASE D (2) G (1) 1 23 S (3) Part Number UJ3C065080K3S Package TO-247-3L Marking UJ3C065080K3S 650V-80mW SiC FET Rev. D, December 2019 Descrip...
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Marking UJ3C065080K3S 650V-80mW SiC FET Rev. D, December 2019 Description This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate dri
UJ3C065080K3S Datasheet
