UB6006 Datasheet | Unitpower

Description The UB6006 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UB6006 meet the Ro HS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cd V/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 60V Applications RDS(ON) 18mΩ ID 45A z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z LCD/LED back light TO263 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Avalanche Current Total Power Dissipation4 Total Power Dissipation 4 2 3 1 1 1 1 Rating 60 ±20 45 28 7.4 6 100 67 28 74 2 -55 to 150 -55 to 150 Units V V A A A A A m J A W W ℃ ℃ Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case 1 1 Typ. ----- Max. 62 1.68 Unit ℃/W ℃/W Free Datasheet http://.. N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions VGS=0V , ID=250u A Reference to 25℃ , ID=1m A VGS=10V , ID=30A VGS=4.5V , ID=15A VGS=VDS , ID =250u A VDS=48V , VGS=0V , TJ=25℃ VDS=48V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=30A VDS=0V , VGS=0V , f=1MHz VDS=48V , VGS=4.5V , ID=15A Min. 60 ------1.2 --------------------VDD=30V , VGS=10V , RG=3.3Ω, ID=15A --------VDS=15V ,...