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| Description | 4N0607-VB TO252 4N0607-VB TO252 Datasheet N-Channel 60 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.0050 0.0120 97 Single FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested TO-252 GDS Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 ... |
| Features |
• TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested TO-252 GDS Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Curren... |
| Datasheet |
 4N0607 Datasheet - 250.08KB |
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