* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* .

* Primary Side Switch GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Para.

IRLR3410

IRLR3410PBF

IRLR3103

IRLR3103PbF

IRLR3105

IRLR3105PBF

IRLR3110Z

IRLR3110ZPBF

IRLR3114Z

IRLR3114ZPbF

IRLR3303

IRLR3303PBF

IRLR3636