Datasheet4U Logo Datasheet4U.com

IRLR3410 - HEXFET Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

  • = 5V for Logic Level Devices Fig 14. For N-Channel.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLR3410 N-Channel MOSFET INCHANGE
IRLR3410 Power MOSFET Infineon
IRLR3410PbF Power MOSFET Infineon
IRLR3410TRPBF N-Channel MOSFET VBsemi
IRLR3103 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLR3410PBF Power MOSFET
IRLR3103 Power MOSFET
IRLR3103PbF Power MOSFET
IRLR3105 HEXFET Power MOSFET
IRLR3105PBF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 91607B IRLR/U3410 HEXFET® Power MOSFET Logic Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR3410) l Straight Lead (IRLU3410) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = 100V G S RDS(on) = 0.105Ω ID = 17A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
Published: |