* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D D G S N-Channel MOSFET www.VBsemi.com ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drai
NCE5015S Datasheet (220.75 KB)
NCE5015S
VBsemi
220.75 KB
N-channel mosfet.
NCE5015S-VB NCE5015S-VB Datasheet N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 6 V ID (.
📁 Related Datasheet
NCE5015S N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE5080K N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE5520Q NCE N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE5530K P-Channel Enhancement Mode Power MOSFET (NCE Power)
NCE5549 NCE N-Channel Enhancement Mode Power MOSFET (NCE Power)
NCE5558K NCE N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE55H11 NCE N-Channel Enhancement Mode Power MOSFET (NCE Power)
NCE55H12 N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE55P04S P-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
NCE55P05S P-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
