nce n-channel enhancement mode power mosfet.
* VDS =55V,ID =110A RDS(ON) < 6mΩ @ VGS=10V
(Typ:4.5mΩ)
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche vo.
General Features
* VDS =55V,ID =110A RDS(ON) < 6mΩ @ VGS=10V
(Typ:4.5mΩ)
Schematic diagram
* High density c.
The NCE55H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =55V,ID =110A RDS(ON) < 6mΩ @ VGS=10V
(Typ:4.5mΩ)
Schematic dia.
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