NCE55H12 Datasheet, Mosfet, NCE Power Semiconductor

NCE55H12 Features

• Mosfet
• VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ)
• High density cell design for ultra low Rdson
• Fully characterized Avalanche voltage and current

PDF File Details

Part number:

NCE55H12

Manufacturer:

NCE Power Semiconductor

File Size:

393.19kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE55H12 Application

• Applications GENERAL FEATURES
• VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ)
• High density cell design for ultra low R

TAGS

NCE55H12

NCE Power Semiconductor

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