NCE55H12 Datasheet - NCE Power Semiconductor

NCE55H12, N-Channel Enhancement Mode Power MOSFET

Pb Free Product http://www.ncepower.com NCE55H12 NCE N-Channel Enhancement Mode Power MOSFET .
The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

NCE55H12-NCEPowerSemiconductor.pdf

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Datasheet Details

Part number:

NCE55H12

Manufacturer:

NCE Power Semiconductor

File Size:

393.19 KB

Description:

N-Channel Enhancement Mode Power MOSFET

Features

* VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ)
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technolog

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