NCE55H12 Datasheet - NCE Power Semiconductor

NCE55H12 - N-Channel Enhancement Mode Power MOSFET

NCE55H12 Features

* VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ)

* High density cell design for ultra low Rdson

* Fully characterized Avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation

* Special process technolog

Datasheet Details

NCE55H12

NCE Power Semiconductor

393.19 KB

N-channel enhancement mode power mosfet.

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