NCE55P30 Datasheet, Mosfet, NCE Power

NCE55P30 Features

• Mosfet
• VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Good s

PDF File Details

Part number:

NCE55P30

Manufacturer:

NCE Power

File Size:

288.22kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE55P30 Application

• Applications General Features
• VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
• High density cell design for ultra low Rdson

TAGS

NCE55P30

NCE Power

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