NCE5530K Datasheet, Mosfet, NCE Power

NCE5530K Features

• Mosfet
• VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
• High density cell design for ultra low Rdson
• Fully characterized Avalanche voltage and current
• Good s

PDF File Details

Part number:

NCE5530K

Manufacturer:

NCE Power

File Size:

412.21kb

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📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE5530K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE5530K Application

• Applications GENERAL FEATURES
• VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
• High density cell design for ultra low Rdson

TAGS

NCE5530K

NCE Power

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