NCE55P30K Datasheet, Mosfet, NCE Power Semiconductor

NCE55P30K Features

• Mosfet
• VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Good s

PDF File Details

Part number:

NCE55P30K

Manufacturer:

NCE Power Semiconductor

File Size:

351.46kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE55P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE55P30K Application

• Applications General Features
• VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
• High density cell design for ultra low Rdson

TAGS

NCE55P30K

NCE Power Semiconductor

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