NCE55H11 Datasheet, Mosfet, NCE Power

NCE55H11 Features

• Mosfet
• VDS =55V,ID =110A RDS(ON) < 6mΩ @ VGS=10V (Typ:4.5mΩ) Schematic diagram
• High density cell design for ultra low Rdson
• Fully characterized avalanche volta

PDF File Details

Part number:

NCE55H11

Manufacturer:

NCE Power

File Size:

453.64kb

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📄 Datasheet

Description:

Nce n-channel enhancement mode power mosfet. The NCE55H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE55H11 Application

• Applications General Features
• VDS =55V,ID =110A RDS(ON) < 6mΩ @ VGS=10V (Typ:4.5mΩ) Schematic diagram
• High density cell des

TAGS

NCE55H11

NCE Power

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