logo
HOME
MOSFET
Toshiba
Renesas
Sanyo Denki
RF Transistor

VB2658 VBsemi

VB2658 P-Channel MOSFET

VB2658 Avg. rating / M : star-15

datasheet Download

VB2658 Datasheet

Features and benefits


• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• P-Channel
• 175 °C Operating.

Image gallery

VB2658 VB2658 VB2658

TAGS
VB2658
P-Channel
MOSFET
VB2610N
VB20100C
VB20100C-E3
VBsemi
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy