VBE1106N Datasheet

Features and Benefits

• TrenchFET® power MOSFET
• 100 % UIS tested TO-252 APPLICATIONS D
• Primary side switch www.VBsemi.com G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =.