VBE1206N Datasheet

Features and Benefits

• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage .