* TrenchFET® power MOSFET
* Package with low thermal resistance TO-263 S Top View S D G G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current d (TJ = 1
VBL2606
VBsemi
273.03 KB
P-channel mosfet.
VBL2606 www.VBsemi.com P-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) -60 0.0050 at VGS = -10 V 0.0070 at VGS = -4.5 V.
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