* Reduced trr, Qrr, and IRRM
* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Low switching losses due to reduced Qrr
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS) TO-220AB GDS D G S N-Channel MOSFET ABSOLUTE MAXIM
VBM165R18 Datasheet (292.70 KB)
VBM165R18
VBsemi
292.70 KB
N-channel mosfet.
VBM165R18 N-Channel 650 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Confi.
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