VBZE4N60 Datasheet

Features and Benefits

• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V, VGS Rating
• Reduced Ciss, Coss, Crss
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-252 GDS Top View D G S N-Channel MOSFET ABSOLUTE.