VBZE20N10 mosfet equivalent, n-channel mosfet.
* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
* .
* Primary Side Switch
GD S
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Para.
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