Part number:
VBZE50N04
Manufacturer:
VBsemi
File Size:
252.85 KB
Description:
N-channel mosfet
VBZE50N04 Datasheet (252.85 KB)
VBZE50N04 Datasheet (252.85 KB)
VBZE50N04
VBsemi
252.85 KB
N-channel mosfet
* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested APPLICATIONS
* Synchronous Rectification
* Power Supplies D RoHS COMPLIANT G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gat
📁 Related Datasheet
VBZE50P06 - P-Channel MOSFET
(VBsemi)
VBZE50P06
P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.020 at VGS = - 10 V - 60
0.025 at VGS = - 4.5 V
ID (A) - 50 - 45
TO.
VBZE5N20 - N-Channel MOSFET
(VBsemi)
VBZE5N20
N-Channel 200 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200
VGS .
VBZE10N65S - N-Channel Power MOSFET
(VBsemi)
VBZE10N65S
.VBsemi.
N-Channel 650V (D-S) Super Junction Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qg.
VBZE20N06 - N-Channel MOSFET
(VBsemi)
VBZE20N06
N-Channel 6 0-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
60
0.023 at VGS = 10 V
0.030 at VGS = 4.5 V
ID (A)a.
VBZE20N10 - N-Channel MOSFET
(VBsemi)
VBZE20N10
N-Channel 100-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
100
0.110 at VGS = 10 V
ID (A) 15
TO-252
D G
FEAT.
VBZE20N20 - N-Channel MOSFET
(VBsemi)
VBZE20N20
N-Channel 200 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) 200
RDS(on) () 0.054 at VGS = 10 V
ID (A) 25
D TO-252
FEATURES .
