VBZE50N04 N-Channel MOSFET

VBsemi

VBZE50N04 Description

VBZE50N04 N-Channel 40-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0050 at VGS = 10 V 40 0.0065 at VGS = 4.5 V ID (A)a,.

VBZE50N04 Features

* TrenchFET® Power MOSFET

VBZE50N04 Applications

* Synchronous Rectification
* Power Supplies D RoHS COMPLIANT G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 7

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Datasheet Details

Part number: VBZE50N04
Manufacturer: VBsemi
File Size: 252.85 KB
Datasheet: VBZE50N04-VBsemi.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET VBsemi

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