VBZE20N10 Datasheet - VBsemi

VBZE20N10 N-Channel MOSFET

VBZE20N10 Features

* TrenchFET® Power MOSFET

* 175 °C Junction Temperature

* PWM Optimized

* 100 % Rg Tested

* Compliant to RoHS Directive 2002/95/EC APPLICATIONS

* Primary Side Switch GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise note

Datasheet Details

VBZE20N10

VBsemi

314.47 KB

N-channel mosfet.

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