Datasheet Details
- Part number
- VBZE20N10
- Manufacturer
- VBsemi
- File Size
- 314.47 KB
- Datasheet
- VBZE20N10-VBsemi.pdf
- Description
- N-Channel MOSFET
VBZE20N10 Description
VBZE20N10 N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 100 0.110 at VGS = 10 V ID (A) 15 TO-252 D G FEAT.VBZE20N10 Features
* TrenchFET® Power MOSFETVBZE20N10 Applications
* Primary Side Switch GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous S
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