VBZE20N10 Datasheet - VBsemi

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VBZE20N10 N-Channel MOSFET

VBZE20N10 N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 100 0.110 at VGS = 10 V ID (A) 15 TO-252 D G FEAT.

VBZE20N10-VBsemi.pdf

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Datasheet Details

Part number:

VBZE20N10

Manufacturer:

VBsemi

File Size:

314.47 KB

Description:

N-Channel MOSFET

Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested

Applications

* Primary Side Switch GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous S

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