VBZE5N20 Datasheet - VBsemi

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VBZE5N20 N-Channel MOSFET

VBZE5N20 N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS .

VBZE5N20-VBsemi.pdf

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Datasheet Details

Part number:

VBZE5N20

Manufacturer:

VBsemi

File Size:

899.77 KB

Description:

N-Channel MOSFET

Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested

Applications

* Primary Side Switch DPAK (TO-252) D GS D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VDS VGS VGS at 10 V TC = 25

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