1N5819RU-1 Datasheet, Diode, VPT

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1N5819RU-1 Features and benefits

* Low Forward Voltage: 490 mV @ IF = 1.0 A
* Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/586
* High Reverse Breakdown Voltage: 45 V
* Herme.

1N5819RU-1 Application

The 1N5819 is designed to be used in wide variety of applications, such as low voltage, high frequency inverters and re.

1N5819RU-1 Description

The 1N5819 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage. The die, which is passivated with an advanced high-reliability passivation for very fast settling time and low leakage current, is packaged in the in.

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