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2N3867S Datasheet Preview

2N3867S Datasheet

PNP Silicon Low Power Transistor

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2N3867, 2N3867S & 2N3868, 2N3868S
PNP Silicon Low Power Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/350
TO-5 Package: 2N3867, 2N3868
TO-39 Package: 2N3867S, 2N3868S
Designed for High Speed Switching and Amplifier Applications
Rev. V3
Electrical Characteristics (TA = 25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min. Max.
Collector - Base Breakdown Voltage
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current
Emitter - Base Cutoff Current
VCB = -40V 2N3867, 2N3867S
VCB = -60V 2N3868, 2N3868S
IC = -20 mA dc, 2N3867, 2N3867S
IC = -20 mA dc, 2N3868, 2N3868S
VEB = +2.0 V dc, VCE = -40 Vdc,
2N3867, 2N3867S
VEB = +2.0 V dc, VCE = -60 Vdc,
2N3868, 2N3868S
VEB = -4.0 Vdc
ICBO1 µA dc
V(BR)CEO V dc
-40
-60
ICEX1 µA dc
IEBO1 µA dc
-100
-1.0
-1.0
-100
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
VCE = -1.0 V dc, IC = -500 mA dc
2N3867, 2N3867S
2N3868, 2N3868S
VCE = -2.0 Vdc, IC = -1.5 A dc
2N3867, 2N3867S
2N3868, 2N3868S
VCE = -3.0 V dc, IC = -2.5 A dc
2N3867, 2N3867S
2N3868, 2N3868S
VCE = -5.0 V dc, IC = -3.0 mA dc
All Types
IC = -500 mA dc, IB = -50 mA dc
IC = -1.5 A dc, IB = -150 mA dc
IC = -2.5 A dc, IB = -250 mA dc
hFE -
VCE(sat)1
VCE(sat)2
VCE(sat)3
V dc
50
35
40
30
25
20
20
200
150
-0.5
-0.75
-1.5
Base - Emitter Saturation Voltage
IC = -500 mA dc, IB = -50 mA dc
IC = -1.5 A dc, IB = -150 mA dc
IC = -2.5 A, IB = -250 mA dc
VBE(sat)1
VBE(sat)2
VBE(sat)3
V dc
-0.9
-1.0
-1.4
-2.0
1 (Continued next page)
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com




VPT

2N3867S Datasheet Preview

2N3867S Datasheet

PNP Silicon Low Power Transistor

No Preview Available !

2N3867, 2N3867S & 2N3868, 2N3868S
PNP Silicon Low Power Transistor
Rev. V3
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Collector - Emitter Cutoff Current
Forward-Current Transfer Ratio
Dynamic Characteristics
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
TA = +150oC
VEB = +2.0 V dc, VCE = -40 Vdc,
2N3867, 2N3867S
VEB = +2.0 V dc, VCE = -60 Vdc,
2N3868, 2N3868S
TA = -55oC
VCE = -1.0 V dc, IC = -500 mA dc
2N3867, 2N3867S
2N3868, 2N3868S
VCE = -5.0 V dc, IC = -100 mA dc,
f = 20 MHz
ICEX2 µA dc
hFE5 V dc
25
17
| hfe |
-
3
Open Circuit Output Capacitance
Input Capacitance
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz Cobo
VCB = -3 Vdc, IC = 0, 100 kHz ≤ f ≤ 1 MHz Cibo
pF
pF
VCC = -30 V dc, VEB = 0, IC = -1.5 A dc,
IB1 = -150 mA dc
td
ns
VCC = -30 V dc, VEB = 0 V dc,
IC = -1.5 A dc, IB1 = -150 mA dc
tr ns
VCC = -30 V dc, VEB = 0 V dc,
IC = -1.5 A dc, IB1 = IB2 = -150 mA dc
ts ns
VCC = -30 V dc, VEB = 0V dc,
IC = -1.5 A dc, IB1 = IB2 = -150 mA dc
tf ns
Max.
-50
-50
12
120
800
35
65
500
100
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com


Part Number 2N3867S
Description PNP Silicon Low Power Transistor
Maker VPT
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2N3867S Datasheet PDF






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