2N3867S Datasheet PDF - VPT PNP Silicon Low Power Transistor Specs

2N3867S - PNP Silicon Low Power Transistor

This page provides the datasheet information for the 2N3867S, a member of the 2N3867 PNP Silicon Low Power Transistor family.

Datasheet Summary

Features

Available in JAN, JANTX, JANTXV per MIL-PRF-19500/350.
TO-5 Package: 2N3867, 2N3868.
TO-39 Package: 2N3867S, 2N3868S.
Designed for High Speed Switching and Amplifier.

Datasheet Details

Part number	2N3867S
Manufacturer	VPT
File Size	427.99 KB
Description	PNP Silicon Low Power Transistor
Datasheet	2N3867S Datasheet
Additional preview pages of the 2N3867S datasheet.

📁 Similar Datasheet

2N3867S - PNP Power Silicon Transistor (MACOM)

2N3867S - Silicon PNP Power Transistors (Microsemi)

2N3867SMD05 - PNP SWITCHING SILICON TRANSISTOR (TT)

2N3867 - Silicon PNP Power Transistors (Microsemi Corporation)

2N3867 - PNP Transistor (CDIL)

2N3867 - SILICON PNP TRANSISTOR (Central Semiconductor)

2N3867 - PNP Power Silicon Transistor (MACOM)

2N3863 - Silicon NPN Power Transistor (Inchange Semiconductor)

2N3864 - NPN Transistor (INCHANGE)

2N3865 - NPN Transistor (INCHANGE)

Full PDF Text Transcription

Click to expand full text

2N3867, 2N3867S & 2N3868, 2N3868S PNP Silicon Low Power Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/350 • TO-5 Package: 2N3867, 2N3868 • TO-39 Package: 2N3867S, 2N3868S • Designed for High Speed Switching and Amplifier Applications Rev. V3 Electrical Characteristics (TA = 25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current VCB = -40V 2N3867, 2N3867S VCB = -60V 2N3868, 2N3868S IC = -20 mA dc, 2N3867, 2N3867S IC = -20 mA dc, 2N3868, 2N3868S VEB = +2.0 V dc, VCE = -40 Vdc, 2N3867, 2N3867S VEB = +2.0 V dc, VCE = -60 Vdc, 2N3868, 2N3868S VEB = -4.

Published: Oct 28, 2019 |