2N3868
2N3868 is PNP Silicon Low Power Transistor manufactured by VPT Components.
- Part of the 2N3867 comparator family.
- Part of the 2N3867 comparator family.
Features
- Available in JAN, JANTX, JANTXV per MIL-PRF-19500/350
- TO-5 Package: 2N3867, 2N3868
- TO-39 Package: 2N3867S, 2N3868S
- Designed for High Speed Switching and Amplifier Applications
Rev. V3
Electrical Characteristics (TA = 25o C unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min. Max.
Collector
- Base Breakdown Voltage Collector
- Emitter Breakdown Voltage
Collector
- Emitter Cutoff Current Emitter
- Base Cutoff Current
VCB = -40V 2N3867, 2N3867S VCB = -60V 2N3868, 2N3868S
IC = -20 m A dc, 2N3867, 2N3867S IC = -20 m A dc, 2N3868, 2N3868S
VEB = +2.0 V dc, VCE = -40 Vdc, 2N3867, 2N3867S
VEB = +2.0 V dc, VCE = -60 Vdc, 2N3868, 2N3868S
VEB = -4.0 Vdc
ICBO1 µA dc V(BR)CEO V dc
-40 -60
ICEX1 µA dc
- IEBO1 µA dc
- -100
- -1.0 -1.0 -100
Forward Current Transfer Ratio Collector
- Emitter Saturation Voltage
VCE = -1.0 V dc, IC = -500 m A dc 2N3867, 2N3867S 2N3868, 2N3868S
VCE = -2.0 Vdc, IC = -1.5 A dc 2N3867, 2N3867S 2N3868, 2N3868S
VCE = -3.0 V dc, IC = -2.5 A dc 2N3867, 2N3867S 2N3868, 2N3868S
VCE = -5.0 V dc, IC = -3.0 m A dc All Types
IC = -500 m A dc, IB = -50 m A dc IC = -1.5 A dc, IB = -150 m A dc IC = -2.5 A dc, IB = -250 m A dc h FE
- VCE(sat)1 VCE(sat)2 VCE(sat)3
V dc
50 35
40 30
25...