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VG36643241BT-8 - CMOS Synchronous Dynamic RAM

Description

The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively.

Features

  • Single 3.3V ( ± 0.3V ) power supply.
  • High speed clock cycle time : 8/10 for LVTTL.
  • High speed clock cycle time : 8/10 for SSTL - 3.
  • Fully synchronous with all signals referenced to a positive clock edge.
  • Programmable CAS Iatency (2,3).
  • Programmable burst length (1,2,4,8,& Full page).
  • Programmable wrap sequence (Sequential/Interleave).
  • Automatic precharge and controlled precharge.
  • Auto refresh and self refresh modes.

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Datasheet preview – VG36643241BT-8

Datasheet Details

Part number VG36643241BT-8
Manufacturer Vanguard International Semiconductor
File Size 0.96 MB
Description CMOS Synchronous Dynamic RAM
Datasheet download datasheet VG36643241BT-8 Datasheet
Additional preview pages of the VG36643241BT-8 datasheet.

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Full PDF Text Transcription

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VIS Description Preliminary VG3664321(4)1(2)BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is packaged in JEDEC standard pinout and standard plastic TSOP package. Features • Single 3.3V ( ± 0.
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