VG36643241BT-8 - CMOS Synchronous Dynamic RAM

Vanguard International Semiconductor

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Datasheet Details

Part number: VG36643241BT-8
Manufacturer: Vanguard International Semiconductor
File Size: 0.96 MB
Datasheet: VG36643241BT-8_VanguardInternationalSemiconductor.pdf
Description: CMOS Synchronous Dynamic RAM

VG36643241BT-8 Product details

Description

Preliminary VG3664321(4)1(2)BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively.lt is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply.It is packaged in.

Features

Single 3.3V ( ± 0.3V ) power supply.
High speed clock cycle time : 8/10 for LVTTL.
High speed clock cycle time : 8/10 for SSTL - 3.
Fully synchronous with all signals referenced to a positive clock edge.
Programmable CAS Iatency (2,3).
Programmable burst length (1,2,4,8,& Full page).
Programmable wrap sequence (Sequential/Interleave).
Automatic precharge and controlled precharge.
Auto refresh and self refresh modes.

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CMOS Synchronous Dynamic RAM Vanguard International Semiconductor

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