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Vanguard Semiconductor

VSB012N06MS Datasheet Preview

VSB012N06MS Datasheet

N-Channel Advanced Power MOSFET

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Features
N-Channel
Enhancement mode
Very low on-resistance RDS(on) @ VGS=4.5 V
Fast Switching
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
VSB012N06MS
60V/44A N-Channel Advanced Power MOSFET
V DS
60 V
R @DS(on),TYP VGS=10 V
9.5 mΩ
R @DS(on),TYP VGS=4.5V
11 mΩ
I D 44 A
TDFN3.3x3.3
Part ID
VSB012N06MS
Package Type
TDFN3.3x3.3
Marking
012N06M
Tape and reel
information
5000pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage
Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM
EAS
Pulse drain current tested
Avalanche energy, single pulsed
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
Symbol
Parameter
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance Junction-Ambient
TC =25°C
TC =25°C
TA =100°C
TC =25°C
ID=20A
TA =25°C
Rating
60
44
44
28
160
100
62
±20
-55 to 150
Typical
1.3
60
Unit
V
A
A
A
A
mJ
W
V
°C
Unit
°C/W
°C/W
CopyrightVanguard Semiconductor Co., Ltd
Rev A Mar, 2016
www.vgsemi.com




Vanguard Semiconductor

VSB012N06MS Datasheet Preview

VSB012N06MS Datasheet

N-Channel Advanced Power MOSFET

No Preview Available !

Typical Characteristics
VSB012N06MS
60V/44A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ TC = 25°C (unless otherwise stated)
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
VGS=0V ID=250μA
VDS=60V,VGS=0V
VDS=60V,VGS=0V
60
--
--
-- --
V
-- 1 μA
-- 100 μA
IGSS
Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250μA 1.0
RDS(ON)
Drain-Source On-State Resistance
VGS=10V, ID=30A
--
RDS(ON)
Drain-Source On-State Resistance
VGS=4.5V, ID=10A
--
Dynamic Electrical Characteristics @ T C= 25°C (unless otherwise stated)
--
1.5
9.5
11
±100
2.5
12
14
nA
V
Ciss Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Characteristics
VDS=24V,VGS=0V,
f=1MHz
VDS=30V,ID=10A,
VGS=10V
-- 1860 --
-- 150 --
-- 95 --
-- 26 --
-- 6.5 --
-- 4.5 --
pF
pF
pF
nC
nC
nC
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=30V,
ID=10A,
RG=6.8Ω,
VGS=10V
-- 9
-- 5
-- 28
-- 4
Source- Drain Diode Characteristics@ TC = 25°C (unless otherwise stated)
--
--
--
--
nS
nS
nS
nS
VSD
trr
Qrr
NOTE:
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=30A,VGS=0V
Tj=25,Isd=20A,
VGS=0V
di/dt=100A/μs
-- 0.88 1.2
-- 23 --
52
V
nS
nC
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 20A, VGS =10V. Part not recommended for use above this value
Pulse width ≤ 300μs; duty cycle≤ 2%.
CopyrightVanguard Semiconductor Co., Ltd
Rev A Mar, 2016
www.vgsemi.com


Part Number VSB012N06MS
Description N-Channel Advanced Power MOSFET
Maker Vanguard Semiconductor
Total Page 5 Pages
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