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Vanguard Semiconductor

VSI008N10MS5 Datasheet Preview

VSI008N10MS5 Datasheet

N-Channel Advanced Power MOSFET

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Features
N-Channel5V Logic Level Control
Enhancement mode
Very low on-resistance RDS(on) @ VGS=4.5 V
VitoMOS® Technology
100% Avalanche test
Pb-free lead plating; RoHS compliant
VSI008N10MS5
100V/94A N-Channel Advanced Power MOSFET
V DS
100 V
R @ DS(on),TYP VGS=10 V
6
mΩ
R @ DS(on),TYP VGS=4.5 V
7.8 mΩ
ID
94
A
TO-251SSL
Part ID
VSI008N10MS5
Package Type
TO-251SSL
Marking
008N10M
Tape and reel
information
75pcs/Tube
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage
Gate-Source voltage
IS
Diode continuous forward current
ID
Continuous drain current @VGS=10V
IDM
Pulse drain current tested
TC =25°C
TC =25°C
TC =100°C
TC =25°C
IDSM
Continuous drain current @VGS=10V
TA=25°C
TA=70°C
EAS
PD
Avalanche energy, single pulsed
Maximum power dissipation
TC =25°C
PDSM
Maximum power dissipation
TA=25°C
TSTG , TJ
Storage and Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Rating
100
±20
94
94
67
376
10
8
41
107
1.25
-55 to 175
Typical
1.4
100
Unit
V
V
A
A
A
A
A
A
mJ
W
W
°C
Unit
°C/W
°C/W
CopyrightVanguard Semiconductor Co., Ltd
Rev A – MAY, 2019
www.vgsemi.com




Vanguard Semiconductor

VSI008N10MS5 Datasheet Preview

VSI008N10MS5 Datasheet

N-Channel Advanced Power MOSFET

No Preview Available !

Electrical Characteristics
VSI008N10MS5
100V/94A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ Tj=25°C (unless otherwis e stated)
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=250μA 100
--
--
V
IDSS
IGSS
Zero Gate Voltage Drain Current
VDS=100V,VGS=0V
--
Zero Gate Voltage Drain Current( Tj =125) VDS=100V,VGS=0V
--
Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
--
1
μA
--
100
μA
--
±100
nA
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250μA 1.5
--
2.5
V
RDS(ON) Drain-Source On-State Resistance
VGS=10V, ID=20A
--
6
8.5
RDS(ON) Drain-Source On-State Resistance
VGS=4.5V, ID=15A
--
7.8
11
Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Qg (10V)
Qg (4.5V)
Qgs
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Qgd
Gate-Drain Charge
Switching Characteristics
2250 2645 3050
pF
VDS=30V,VGS=0V,
980 1155 1305
pF
f=1MHz
25
35
45
pF
f=1MHz
--
3.2
--
Ω
--
45
--
nC
VDS=50V,ID=20A,
--
23
--
nC
VGS=10V
--
8
--
nC
--
9
--
nC
td(on)
tr
td(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=50V,
ID=20A,
RG=3Ω,
VGS=10V
--
11.7
--
ns
--
7.2
--
ns
--
34.5
--
ns
--
12.3
--
ns
Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated)
VSD
Forward on voltage
ISD=20A,VGS=0V
--
0.8
1.2
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Tj=25,Isd=20A,
--
21.6
--
ns
VGS=0V
di/dt=500A/μs
--
44.7
--
nC
NOTE:
Repetitive rating; pulse width limited by max junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 10A, VGS =10V. Part not recommended for use above this value
The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.
Pulse width ≤ 300μs; duty cycle≤ 2%.
CopyrightVanguard Semiconductor Co., Ltd
Rev A – MAY, 2019
www.vgsemi.com


Part Number VSI008N10MS5
Description N-Channel Advanced Power MOSFET
Maker Vanguard Semiconductor
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