1N5550 to 1N5552
Vishay Semiconductors
VISHAY
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Typical thermal resistance 1)
Test condition
Symbol
RθJA
RθJL
Value
22
12
Unit
K/W
K/W
1) Thermal resistance from junction to ambient and from junction to lead at 0.375 " (9.5mm) lead length, with both leads mounted between
heat sinks.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Minimum reverse breakdown
voltage
IR = 50 µA
Part Symbol Min Typ. Max Unit
1N5550 V(BR)
240
V
Maximum instantaneous
forward voltage
Maximum reverse current
Maximum junction capacitance
IF = 9.0 A
VR = VRRM, Tamb = 25 °C
VR = VRRM, Tamb = 100 °C
VR = 12 V, f = 1 MHz
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
1N5551
1N5552
1N5550
1N5551
1N5552
V(BR)
V(BR)
VF
IR
IR
Cj
Cj
Cj
trr
460
660
V
V
1.2 V
1.0 µA
25 µA
150 pF
120 pF
100 pF
2.0 µs
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
5.0
TL , Lead Temperature
L = 0.375" (9.5mm)
4.0
3.0
2.0 TA, Ambient Temperature
0.375" (9.5mm) Lead Length
P.C.B. Mounting
0.8 x 0.8 x .040"
(20 x 20 x 1mm)
Copper Heatsinks
1.0
Resistive or Inductive Load
0
0
g1n5550_01
25 50 75 100 125 150 175 200
Temperature (°C)
Figure 1. Forward Current Derating Curve
200
TJ = TJmax
8.3ms Single Half Sine-Wave
(JEDEC Method)
100
10
1 10 100
g1n5550_02
Number of Cycles at 60 HZ
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 86080
Rev. 1.3, 11-Aug-04
