AN605 Datasheet - Vishay

Power MOSFET

AN605 General Description

Base resistance TABLE 1 Symbol RB Rg Gate resistance internal to the MOSFET Cgs Capacitance due to the overlap of the source and channel regions by the polysilicon gate. Independent of applied voltage. Consists of two parts: Cgd 1.. Associated with the overlap of the polysilicon gate and the .

AN605 Datasheet (116.53 KB)

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AN605

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Vishay ↗

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Power mosfet.
AN605 Vishay Siliconix Power MOSFET Basics: Understanding MOSFET Characteristics Associated With The Figure of Merit Jess Brown, Guy Moxey INTRODUCT.

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AN605 General Description

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