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Vishay Intertechnology Electronic Components Datasheet

BA783-G Datasheet

Band Switching Diodes

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BA783-G pdf
www.vishay.com
BA782-G, BA783-G
Vishay Semiconductors
Band Switching Diodes
MECHANICAL DATA
Case: SOD-123
Weight: approx. 9.4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode switches
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Base P/N-HG3 - green, AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION
For electric bandswitching in radio and TV tuners in the
frequency range of (50 to 1000) MHz. The dynamic forward
resistance is constant and very small over a wide range of
frequency and forward current. The reverse capacitance is
also small and largely independent of the reverse voltage.
PARTS TABLE
PART
BA782-G
BA783-G
ORDERING CODE
BA782-G3-08 or BA782-G3-18
BA782-HG3-08 or BA782-HG3-18
BA783-G3-08 or BA783-G3-18
BA783-HG3-08 or BA783-HG3-18
TYPE MARKING
R4
R5
REMARKS
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
Reverse voltage
Forward continuous current
VR 35
IF 100
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Junction temperature
Storage temperature range
Operating temperature range
Tj 125
Tstg - 55 to + 150
Top - 55 to + 125
UNIT
V
mA
UNIT
°C
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
Reverse current
Diode capacitance
Dynamic forward resistance
Series inductance across case
IF = 100 mA
VR = 20 V
f = 1 MHz, VR = 1 V
f = 1 MHz, VR = 3 V
f = (50 to 1000) MHz, IF = 3 mA
f = (50 to 1000) MHz, IF = 10 mA
BA782-G
BA783-G
BA782-G
BA783-G
BA782-G
BA783-G
VF
IR
CD1
CD2
CD2
rf1
rf1
rf2
rf2
LS
TYP.
2.5
MAX.
1000
50
1.5
1.25
1.2
0.7
1.2
0.5
0.9
UNIT
mV
nA
pF
pF
pF
nH
Rev. 1.1, 14-May-14
1 Document Number: 85240
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

BA783-G Datasheet

Band Switching Diodes

No Preview Available !

BA783-G pdf
www.vishay.com
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
BA782-G, BA783-G
Vishay Semiconductors
2.0
1.8 Tj = 25 °C
1.6 f = 1 MHz
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
18798
1 10
VR - Reverse Voltage (V)
Fig. 1 - Diode Capacitance
100
10
Tamb = 25 °C
BA782-G, BA783-G
1 kHz
BA783-G
100 MHz
1
BA782-G
100 MHz
0.1
1
10 100
IF - Forward Current (mA)
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Cathode bar
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Mounting Pad Layout
0.85 (0.033)
0.85 (0.033)
2.5 (0.098)
Rev. 1.1, 14-May-14
2 Document Number: 85240
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number BA783-G
Description Band Switching Diodes
Maker Vishay
Total Page 3 Pages
PDF Download
BA783-G pdf
BA783-G Datasheet PDF
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