* Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS)
* Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM):
IRF830B
293.17 KB
D series power mosfet.
www.vishay.com IRF830B Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Q.
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