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IRFBC30L Datasheet Power MOSFET

Manufacturer: Vishay

Download the IRFBC30L datasheet PDF. This datasheet also includes the IRFBC30S variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRFBC30S-Vishay.pdf) that lists specifications for multiple related part numbers.

General Description

G G D S G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.

See device orientation.

D2PAK (TO-263) SiHFBC30S-GE3 IRFBC30SPbF SiHFBC30S-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) dV/dtc, e TA = 25 °C TC = 25 °C Currenta, e VGS at 10

Overview

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 31 4.

Key Features

  • 600 2.2.
  • Halogen-free According to IEC 61249-2-21 Definition.
  • Surface Mount (IRFBC30S, SiHFBC30S).
  • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L).
  • Available in Tape and Reel (IRFBC30S, SiHFBC30S).
  • Dynamic dV/dt Rating.
  • 150 °C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best combination o.

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