IRFBC30S Description
G G D S G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. pulse width limited by maximum junction temperature (see fig. VDD = 50 V, starting TJ = 25 °C, L = 41 mH, Rg = 25 , IAS = 3.6 A (see fig.
IRFBC30S Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- Surface Mount (IRFBC30S, SiHFBC30S)
- Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)
- Available in Tape and Reel (IRFBC30S, SiHFBC30S)
- Dynamic dV/dt Rating
- 150 °C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- pliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best binati