IRFBC30S Datasheet | Vishay

IRFBC30S, Si HFBC30S, IRFBC30L, Si HFBC30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration VGS = 10 V 31 4.6 17 Single Features 600 2.2 - Halogen-free According to IEC 61249-2-21 Definition - Surface Mount (IRFBC30S, Si HFBC30S) - Low-Profile Through-Hole (IRFBC30L, Si HFBC30L) - Available in Tape and Reel (IRFBC30S, Si HFBC30S) - Dynamic d V/dt Rating - 150 °C Operating Temperature - Fast Switching - Fully Avalanche Rated - pliant to Ro HS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC30L, Si HFBC30L) is a available for low-profile applications. D2PAK (TO-263) Si HFBC30STRL-GE3a IRFBC30STRLPb Fa Si HFBC30STL-E3a I2PAK (TO-262) Si HFBC30L-GE3 IRFBC30LPb F Si HFBC30L-E3 I2PAK (TO-262) D2PAK (TO-263) DESCRIPTION G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) Si HFBC30S-GE3 IRFBC30SPb F Si...