Datasheet Summary
.vishay.
Vishay Siliconix
Power MOSFET
D TO-220 FULLPAK
S GD
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
39 10 19 Single
Features
- Ultra low gate charge
- Reduced gate drive requirement
- Enhanced 30 V VGS rating
- Isolated package
- High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Sink to lead creepage distance = 4.8 mm
- Repetitive avalanche rated
- Material categorization: for definitions of pliance please see .vishay./doc?99912
DESCRIPTION
This series of low charge power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing...
