IRFI840GLC Datasheet and Specifications PDF

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This series of low charge power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced power MOSFET technology, the device improvements allow for reduced gate dr.

* Ultra low gate charge
* Reduced gate drive requirement
* Enhanced 30 V VGS rating
* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to lead creepage distance = 4.8 mm
* Repetitive avalanche rated
* Material categorization: for definitions of compliance please see.