IRFPG40 Datasheet | Vishay

FEATURES - Dynamic d V/dt rated - Repetitive avalanche rated - Isolated central mounting hole Available - Fast switching - Ease of paralleling - Simple drive requirements - Material categorization: for definitions of pliance please see .vishay./doc?99912 Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for mercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO-247AC IRFPG40Pb F ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VGS at 10 V TC = 25 °C TC = 100 °C Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery d V/dt c TC = 25 °C EAS IAR EAR PD d V/dt Operating junction and storage temperature range Soldering remendations (peak temperature) for 10 s TJ, Tstg Mounting torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 50 m H, Rg = 25 Ω, IAS = 4.3 A (see fig. 12) c. ISD ≤ 4.3 A, d I/dt ≤ 100 A/μs, VDD ≤ 600, TJ ≤ 150 °C d. 1.6 mm from case LIMIT 1000 ± 20 4.3 2.7 17 1.2 490 4.3 15 150 1.0 -55 to +150 300 d 10 1.1 UNIT...