IRLI640G
FEATURES
- Isolated package
- High voltage isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz)
- Sink to lead creepage distance = 4.8 mm
- Logic-level gate drive
- RDS(on) specified at VGS = 4 V and 5 V
- Fast switching
- Ease of paralleling
- Material categorization: for definitions of pliance please see .vishay./doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provides the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
ORDERING INFORMATION
Package Lead (Pb)-free
TO-220 FULLPAK IRLI640GPb...
