Datasheet4U Logo Datasheet4U.com

IRLI640G - ower MOSFET

📥 Download Datasheet

General Description

Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.

Overview

www.vishay.com IRLI640G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 VGS = 5.0 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.

Key Features

  • Isolated package.
  • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to lead creepage distance = 4.8 mm.
  • Logic-level gate drive.
  • RDS(on) specified at VGS = 4 V and 5 V.
  • Fast switching.
  • Ease of paralleling.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
International Rectifier Logo IRLI640G Power MOSFET International Rectifier
International Rectifier Logo IRLI640GPBF HEXFET Power MOSFET International Rectifier
Fairchild Semiconductor Logo IRLI640A Power MOSFET Fairchild Semiconductor

More Datasheets from Vishay

Part Number Description
IRLI630G Power MOSFET
IRLI520G Power MOSFET
IRLI530G Power MOSFET
IRLI540G Power MOSFET
IRLIZ14G Power MOSFET
IRLIZ24G Power MOSFET
IRLIZ34G Power MOSFET
IRLIZ44G Power MOSFET
IRL510S Power MOSFET
IRL520 Power MOSFET