IRLI640G mosfet equivalent, ower mosfet.
* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to lead creepage distance = 4.8 mm
* Logic-level gate drive
* RDS.
The molding compound used provides a high isolation capability and a low thermal resistance between the tab and externa.
Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardwar.
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