Datasheet Summary
.vishay.
MBR1090CT, MBR10100CT
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS®
TO-220AB
PIN 1 PIN 3
3 2 1
PIN 2
CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
VF TJ max. Package
2 x 5.0 A 90 V, 100 V
120 A 0.75 V 150 °C TO-220AB
Diode variation
Dual mon cathode
Features
- Trench MOS Schottky technology
- Lower power losses, high efficiency
- Low forward voltage drop
- High forward surge capability
- High frequency operation
- Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106
- Material categorization: for definitions of pliance please see .vishay./doc?99912
TYPICAL APPLICATIONS For use in high frequency...
