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MBR10100CT - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Download the MBR10100CT datasheet PDF. This datasheet also covers the MBR1090CT variant, as both devices belong to the same dual high-voltage trench mos barrier schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Features

  • Trench MOS Schottky technology.
  • Lower power losses, high efficiency.
  • Low forward voltage drop.
  • High forward surge capability.
  • High frequency operation.
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR1090CT-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBR10100CT
Manufacturer Vishay
File Size 122.87 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet MBR10100CT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com MBR1090CT, MBR10100CT Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS® TO-220AB PIN 1 PIN 3 3 2 1 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 2 x 5.0 A 90 V, 100 V 120 A 0.75 V 150 °C TO-220AB Diode variation Dual common cathode FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.
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