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MBR10100-M3 - High Voltage Trench MOS Barrier Schottky Rectifier

Download the MBR10100-M3 datasheet PDF. This datasheet also covers the MBR1090-M3 variant, as both devices belong to the same high voltage trench mos barrier schottky rectifier family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Trench MOS Schottky technology.
  • Lower power losses, high efficiency.
  • Low forward voltage drop.
  • High forward surge capability.
  • High frequency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR1090-M3-Vishay.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBR10100-M3
Manufacturer Vishay
File Size 106.50 KB
Description High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet MBR10100-M3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com MBR1090-M3, MBR10100-M3 Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier TMBS® TO-220AC PIN 1 PIN 2 2 1 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 10 A 90 V, 100 V 150 A 0.65 V 150 °C TO-220AC Diode variations Single die FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.