Datasheet4U Logo Datasheet4U.com
Vishay logo

MBR10100CT-E3

Manufacturer: Vishay

This datasheet includes multiple variants, all published together in a single manufacturer document.

MBR10100CT-E3 datasheet preview

Datasheet Details

Part number MBR10100CT-E3
Datasheet MBR10100CT-E3 MBR1090CT-E3 Datasheet (PDF)
File Size 125.91 KB
Manufacturer Vishay
Description Dual Common Cathode High Voltage Schottky Rectifier
MBR10100CT-E3 page 2 MBR10100CT-E3 page 3

MBR10100CT-E3 Overview

Package 2 x 5.0 A 90 V, 100 V 120 A 0.75 V 150 °C TO-220AB Diode variation Dual mon cathode.

MBR10100CT-E3 Key Features

  • Trench MOS Schottky technology
  • Lower power losses, high efficiency
  • Low forward voltage drop
  • High forward surge capability
  • High frequency operation
  • Solder bath temperature 275 °C maximum, 10 s
  • Material categorization: for definitions of pliance
Vishay logo - Manufacturer

More Datasheets from Vishay

See all Vishay datasheets

Part Number Description
MBR10100CT Dual High-Voltage Trench MOS Barrier Schottky Rectifier
MBR10100 High-Voltage Schottky Rectifier
MBR10100-M3 High Voltage Trench MOS Barrier Schottky Rectifier
MBR1035 Schottky Barrier Rectifier
MBR1045 Schottky Barrier Rectifier
MBR1050 Schottky Barrier Rectifier
MBR1060 Schottky Barrier Rectifier
MBR1090 High-Voltage Schottky Rectifier
MBR1090-M3 High Voltage Trench MOS Barrier Schottky Rectifier
MBR1090CT Dual High-Voltage Trench MOS Barrier Schottky Rectifier

MBR10100CT-E3 Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts